https://scholars.lib.ntu.edu.tw/handle/123456789/447616
Title: | Effect of mechanical stress on characteristics of silicon thermal oxides | Authors: | Huang, C. H. JENN-GWO HWU JIA-YUSH YEN |
Keywords: | Interface state density; Mechanical stress; Oxides | Issue Date: | 2002 | Journal Volume: | 41 | Journal Issue: | 1 | Start page/Pages: | 81-82 | Source: | Japanese Journal of Applied Physics | Abstract: | The characteristics of silicon thermal oxides grown on silicon wafers under mechanical stress were discussed. It was found that the etch rate of SiO2 films grown under compressive stress was decreased. The capacitance-voltage (C-V) measurements showed that the interface state density of tensile sample was decreased and that of compressive sample was increased. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-0036317703&doi=10.1143%2fJJAP.41.81&partnerID=40&md5=5449612cd42f5415749463dbfbc09664 | ISSN: | 0021-4922 | DOI: | 10.1143/JJAP.41.81 | SDG/Keyword: | Capacitance; Compressive stress; Electric potential; Etching; Interfaces (materials); Semiconducting films; Semiconductor growth; Silicon wafers; Tensile properties; Mechanical stress; Semiconducting silicon compounds |
Appears in Collections: | 機械工程學系 |
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