https://scholars.lib.ntu.edu.tw/handle/123456789/447948
Title: | The effect of CESL and dummy poly gate for n-type MOSFETs with short Si<inf>0.75</inf>Ge<inf>0.25</inf> channel | Authors: | Lee, C.-C. Hsu, H.-W. Liao, M.-H. MING-HAN LIAO |
Issue Date: | 2017 | Journal Volume: | 140 | Start page/Pages: | 66-70 | Source: | Vacuum | URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/447948 | DOI: | 10.1016/j.vacuum.2016.08.009 |
Appears in Collections: | 機械工程學系 |
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