The effect of CESL and dummy poly gate for n-type MOSFETs with short Si0.75Ge0.25 channel

Journal

Vacuum

Journal Volume

140

Pages

66-70

Date Issued

2017

Author(s)

Lee, C.-C.

Hsu, H.-W.

Liao, M.-H.

DOI

10.1016/j.vacuum.2016.08.009

URI

https://scholars.lib.ntu.edu.tw/handle/123456789/447948

URL

https://www.scopus.com/inward/record.uri?eid=2-s2.0-85002729652&doi=10.1016%2fj.vacuum.2016.08.009&partnerID=40&md5=099bfdb572f232e9560c053c8ef1bc58

Type

journal article