https://scholars.lib.ntu.edu.tw/handle/123456789/447958| Title: | Erratum to "Additional Nitrogen Ion-Implantation Treatment in STI to Relax the Intrinsic Compressive Stress for n-MOSFETs" | Authors: | Liao, M.-H. Chen, C.H. Chang, L.C. Yang, C. MING-HAN LIAO MING-HAN LIAO |
Issue Date: | 2015 | Journal Volume: | 62 | Journal Issue: | 4 | Start page/Pages: | 1360- | Source: | IEEE Transactions on Electron Devices | URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/447958 | DOI: | 10.1109/TED.2015.2405334 |
| Appears in Collections: | 機械工程學系 |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.