https://scholars.lib.ntu.edu.tw/handle/123456789/497396
標題: | 160-190-GHz Monolithic Low-Noise Amplifiers | 作者: | Kok, Y.L. Lai, R. Barsky, M. Chen, Y.C. Sholley, M. Block, T. Streit, D.C. Liu, P.H. Allen, B.R. Smoska, L. HUEI WANG TIAN-WEI HUANG |
關鍵字: | High electron mobility transistor (HEMT); LNA; MMIC; noise figure (NF); pseudomorphic (PM) technology | 公開日期: | 1999 | 卷: | 9 | 期: | 8 | 起(迄)頁: | 311-313 | 來源出版物: | IEEE Microwave and Guided Wave Letters | 摘要: | This letter presents the results of two 160-190-GHz monolithic low-noise amplifiers (LNA's) fabricated with 0.07-µm pseudomorphic (PM) InAlAs/InGaAs/InP HEMT technology using a reactive ion etch (RIE) via hole process. A peak small signal gain of 9 dB was measured at 188 GHz for the first LNA with a 3-dB bandwidth from 164 to 192 GHz while the second LNA has achieved over 6-dB gain from 142 to 180 GHz. The same design (second LNA) was also fabricated with a 0.08-µm gate and a wet etch process, showing a small-signal gain of 6 dB with 6-dB noise figure. All the measurement results were obtained via on-wafer probing. The LNA noise measurement at 170 GHz is also the first attempt at this frequency. © 1999, by The Institute of Electrical and Electronics Engineers, Inc. All rights reserved. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-8744236390&doi=10.1109%2f75.779912&partnerID=40&md5=13ffe02c7ea167c3d46693e3c07f1ae3 | DOI: | 10.1109/75.779912 |
顯示於: | 電機工程學系 |
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