https://scholars.lib.ntu.edu.tw/handle/123456789/498720
Title: | A p-(Al,Ga)As/GaAs Modulation-doped heterostructure prepared by liquid phase epitaxy | Authors: | SI-CHEN LEE Sun, T.-B. |
Keywords: | AlGaAs; heterostructure; liquid phase epitaxy; mobility; Modulation-doped | Issue Date: | 1986 | Journal Volume: | 47 | Journal Issue: | 10 | Start page/Pages: | 975-979 | Source: | Journal of Physics and Chemistry of Solids | Abstract: | A p-type (Al,Ga)As/GaAs modulation-doped heterostructure was successfully fabricated by liquid phase epitaxy. Its mobility and sheet hole concentration as a function of the aluminum composition were studied in the temperature range of 77-400 K. It is found that the hole mobility is enhanced whenever the aluminum mole fraction x is between x = 0.05 and 0.5. The maximum mobility obtained at 77 K is 3200 cm2 V sec for Al0.2Ga0.8As/GaAs with a 300 Å spacer layer. It is concluded that the hole mobility can be enhanced at low temperature as long as the holes are spatially separated from their parent atoms no matter whether due to a valence band discontinuity or an impurity concentration gradient. © 1986. |
URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/498720 https://www.scopus.com/inward/record.uri?eid=2-s2.0-0022898633&doi=10.1016%2f0022-3697%2886%2990111-3&partnerID=40&md5=335d3a98a474ae79a26c7f46bf77cba7 |
ISSN: | 00223697 | DOI: | 10.1016/0022-3697(86)90111-3 | SDG/Keyword: | SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; HETEROSTRUCTURE; LIQUID PHASE EPITAXY; MOBILITY; MODULATION-DOPED; SEMICONDUCTOR DEVICES |
Appears in Collections: | 電機工程學系 |
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