https://scholars.lib.ntu.edu.tw/handle/123456789/500383
標題: | The incorporation behavior of As and P in GaInAsP (λ ? μm) on InP grown by gas source molecular beam epitaxy | 作者: | Lee, T.-L. Liu, J.-S. HAO-HSIUNG LIN |
公開日期: | 1995 | 卷: | 155 | 期: | 1-2 | 起(迄)頁: | 16-22 | 來源出版物: | Journal of Crystal Growth | 摘要: | A simple model has been successfully developed to explain the incorporation behavior of As and P in growing GaxIn1-xAsyP1-y quaternary alloys on (100) InP using gas source molecular beam epitaxy (GSMBE). In this model there is only one incorporation parameter, i.e. the As to P incorporation ratio, which was determined by fitting the calculated solid composition ratio of P As to the experimental results. It is found that when x is fixed at 0.263 the incorporation ratio is about 16 at a growth temperature of 490°C and slightly increases when the growth temperature decreases. Additionally, the RHEED pattern observations and the growth temperature dependence are also discussed. This model can be expanded to the whole range of compositions by adjusting only one fitting parameter, k, and can provide a very useful guide for the epitaxial growth of GaxIn1-xAsyP1-y quaternary alloys on InP substrate by GSMBE. © 1995. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-0029386364&doi=10.1016%2f0022-0248%2895%2900227-8&partnerID=40&md5=fcb6a2dc952ca1209cb1c7550b2cdbdd | DOI: | 10.1016/0022-0248(95)00227-8 | SDG/關鍵字: | Addition reactions; Arsenic; Composition; Gallium alloys; Mathematical models; Molecular beam epitaxy; Phosphorus; Reflection high energy electron diffraction; Semiconducting gallium compounds; Semiconducting indium phosphide; Thermal effects; Gas source molecular beam epitaxy; Incorporation behavior; Quaternary alloy; Semiconducting gallium indium arsenic phosphide; Solid composition ratio; Semiconductor growth |
顯示於: | 電機工程學系 |
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