https://scholars.lib.ntu.edu.tw/handle/123456789/505950
標題: | Design, Modeling, and Fabrication of High-Speed VCSEL with Data Rate up to 50 Gb/s | 作者: | Shen, Chih-Chiang Hsu, Tsung-Chi Yeh, Yen-Wei Kang, Chieh-Yu Lu, Yun-Ting Lin, Hon-Way Tseng, Hsien-Yao Chen, Yu-Tzu Chen, Cheng-Yuan CHIEN-CHUNG LIN CHAO-HSIN WU Lee, Po-Tsung Sheng, Yang Chiu, Ching-Hsueh Kuo, Hao-Chung |
關鍵字: | 50 Gb/s; Cavity length; High-speed VCSEL; Oxide aperture; PICS3D | 公開日期: | 2019 | 卷: | 14 | 期: | 1 | 起(迄)頁: | 276 | 來源出版物: | Nanoscale Research Letters | 摘要: | We have studied the characteristics of frequency response at 850-nm GaAs high-speed vertical-cavity surface-emitting lasers (VCSELs) with different kinds of oxide aperture sizes and cavity length using the PICS3D simulation program. Using 5-μm oxide aperture sizes, the frequency response behavior can be improved from 18.4 GHz and 15.5 GHz to 21.2 GHz and 19 GHz in a maximum of 3 dB at 25 °C and 85 °C, respectively. Numerical simulation results also suggest that the frequency response performances improved from 21.2 GHz and 19 GHz to 30.5 GHz and 24.5 GHz in a maximum of 3 dB at 25 °C and 85 °C due to the reduction of cavity length from 3λ/2 to λ/2. Consequently, the high-speed VCSEL devices were fabricated on a modified structure and exhibited 50-Gb/s data rate at 85 °C. © 2019, The Author(s). |
URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/505950 https://www.scopus.com/inward/record.uri?eid=2-s2.0-85070690097&doi=10.1186%2fs11671-019-3107-7&partnerID=40&md5=1ddc470f136dc557076f48acc0f704c0 |
ISSN: | 1931-7573 | DOI: | 10.1186/s11671-019-3107-7 | SDG/關鍵字: | Fabrication; Frequency response; Gallium arsenide; III-V semiconductors; Transceivers; Cavity length; Data rates; High Speed; Oxide aperture; PICS3D; Response performance; Simulation program; Surface emitting lasers |
顯示於: | 電機工程學系 |
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