https://scholars.lib.ntu.edu.tw/handle/123456789/559060
標題: | Gate-defined quantum dots in Ge/SiGe quantum wells as a platform for spin qubits | 作者: | Hardy, W.J. Su, Y.-H. Chuang, Y. Maurer, L.N. Brickson, M. Baczewski, A. JIUN-YUN LI Lu, T.-M. Luhman, D.R. |
公開日期: | 2019 | 卷: | 92 | 期: | 1 | 起(迄)頁: | 17 - 25 | 來源出版物: | ECS Transactions | 會議論文: | Symposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics 17 - 236th ECS Meeting | 摘要: | In the field of semiconductor quantum dot spin qubits, there is growing interest in leveraging the unique properties of hole-carrier systems and their intrinsically strong spin-orbit coupling to engineer novel qubits. Recent advances in semiconductor heterostructure growth have made available high quality, undoped Ge/SiGe quantum wells, consisting of a pure strained Ge layer flanked by Ge-rich SiGe layers above and below. These quantum wells feature heavy hole carriers and a cubic Rashba-type spin-orbit interaction. Here, we describe progress toward realizing spin qubits in this platform, including development of multi-metal-layer gated device architectures, device tuning protocols, and charge-sensing capabilities. Iterative improvement of a three-layer metal gate architecture has significantly enhanced device performance over that achieved using an earlier single-layer gate design. We discuss ongoing, simulation-informed work to fine-tune the device geometry, as well as efforts toward a single-spin qubit demonstration. ©The Electrochemical Society |
URI: | https://www.scopus.com/inward/record.url?eid=2-s2.0-85077205052&partnerID=40&md5=e8da95dbf1b2ff2ce664f9f21d2f1a94 https://scholars.lib.ntu.edu.tw/handle/123456789/559060 |
ISSN: | 19386737 | DOI: | 10.1149/09201.0017ecst | SDG/關鍵字: | Metals; Nanocrystals; Nanoelectronics; Network architecture; Quantum optics; Qubits; Semiconducting germanium; Semiconductor quantum dots; Semiconductor quantum wells; Si-Ge alloys; Silicon; Charge sensing; Device geometries; Device performance; Gate-defined quantum dots; Ge/sige quantum wells; Iterative improvements; Rashba-type spin-orbit; Semiconductor heterostructure; Spin orbit coupling |
顯示於: | 電機工程學系 |
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