https://scholars.lib.ntu.edu.tw/handle/123456789/580604
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | CHEE-WEE LIU | en_US |
dc.date.accessioned | 2021-09-02T00:03:49Z | - |
dc.date.available | 2021-09-02T00:03:49Z | - |
dc.date.issued | 2018 | - |
dc.identifier.issn | 24759953 | - |
dc.identifier.uri | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85059620045&doi=10.1103%2fPhysRevMaterials.2.066004&partnerID=40&md5=19326549b280258a54ff11b4017d480d | - |
dc.identifier.uri | https://scholars.lib.ntu.edu.tw/handle/123456789/580604 | - |
dc.description.abstract | As a first step to porting scanning tunneling microscopy methods of atomic-precision fabrication to a strained-Si/SiGe platform, we demonstrate post-growth P atomic-layer doping of SiGe heterostructures. To preserve the substrate structure and elastic state, we use a T?800 ° C process to prepare clean Si0.86Ge0.14 surfaces suitable for atomic-precision fabrication. P-saturated atomic-layer doping is incorporated and capped with epitaxial Si under a thermal budget compatible with atomic-precision fabrication. Hall measurements at T=0.3 K show that the doped heterostructure has R□=570±30Ω, yielding an electron density ne=2.1±0.1×1014cm-2 and mobility μe=52±3cm2V-1s-1, similar to saturated atomic-layer doping in pure Si and Ge. The magnitude of μe and the complete absence of Shubnikov-de Haas oscillations in magnetotransport measurements indicate that electrons are overwhelmingly localized in the donor layer, and not within a nearby buried Si well. This conclusion is supported by self-consistent Schr?dinger-Poisson calculations that predict electron occupation primarily in the donor layer. ? 2018 American Physical Society. | - |
dc.relation.ispartof | Physical Review Materials | - |
dc.subject | Atoms; Budget control; Crystal atomic structure; Hall mobility; Scanning tunneling microscopy; Silicon; Substrates; Atomic precision; Atomic-layer doping; Electron occupation; Hall measurements; Magneto-transport measurement; Shubnikov de-Haas oscillation; Strained-Si/SiGe; Substrate structure; Si-Ge alloys | - |
dc.title | Atomic-layer doping of SiGe heterostructures for atomic-precision donor devices | en_US |
dc.type | journal article | en |
dc.identifier.doi | 10.1103/PhysRevMaterials.2.066004 | - |
dc.identifier.scopus | 2-s2.0-85059620045 | - |
dc.relation.journalvolume | 2 | - |
dc.relation.journalissue | 6 | - |
item.cerifentitytype | Publications | - |
item.openairetype | journal article | - |
item.fulltext | no fulltext | - |
item.grantfulltext | none | - |
item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
crisitem.author.dept | Electronics Engineering | - |
crisitem.author.dept | Photonics and Optoelectronics | - |
crisitem.author.dept | Electrical Engineering | - |
crisitem.author.dept | Center for Condensed Matter Sciences | - |
crisitem.author.dept | MediaTek-NTU Research Center | - |
crisitem.author.dept | Center for Artificial Intelligence and Advanced Robotics | - |
crisitem.author.orcid | 0000-0002-6439-8754 | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | Others: University-Level Research Centers | - |
crisitem.author.parentorg | Others: University-Level Research Centers | - |
crisitem.author.parentorg | Others: University-Level Research Centers | - |
顯示於: | 電機工程學系 |
在 IR 系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。