https://scholars.lib.ntu.edu.tw/handle/123456789/580635
標題: | Novel vertically stacked Ge0.85Si0.15 nGAAFETs above a Si channel with low SS of 76 mV/dec by underneath Si channel and enhanced I on (1.7X at V OV = V DS = 0.5 V) by Ge0.85Si0.15 channels | 作者: | CHEE-WEE LIU Liu Y.-C Huang Y.-S Lu F.-L Ye H.-Y Tu C.-T CHEE-WEE LIU |
關鍵字: | Electrostatics; Ions; Silicon; Threshold voltage; Channel dimension; Drain-induced barrier lowering; Electrostatic control; Engineering solutions; Gate-all-around; Sub-threshold behavior; Sub-threshold regions; Subthreshold slope; Si-Ge alloys | 公開日期: | 2020 | 卷: | 35 | 期: | 5 | 來源出版物: | Semiconductor Science and Technology | 摘要: | An engineering solution is provided to improve the electrostatic behaviors of Ge-based channels gate-all-around FETs. We demonstrate the vertically stacked Ge0.85Si0.15 channels above a Si channel, which has good subthreshold behaviors. The two Ge0.85Si0.15 channels are tensily strained to improve I on. With optimized channel dimensions, the threshold voltage of Ge0.85Si0.15 channels is more positive than the Si channel by quantum confinement. Therefore, the underneath Si channel with good electrostatic control dominates the subthreshold region. Good subthreshold slope = 76 mV/dec and low drain-induced barrier lowering = 36 mV/V are achieved. For on-state, the stacked high-mobility GeSi channels turn on after the Si channel to achieve I on of 13.9 μA per stack at V OV = V DS = 0.5 V. ? 2020 IOP Publishing Ltd. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85083189876&doi=10.1088%2f1361-6641%2fab78f9&partnerID=40&md5=55193440d504ba4a3a2d59c7cbd09af9 https://scholars.lib.ntu.edu.tw/handle/123456789/580635 |
ISSN: | 02681242 | DOI: | 10.1088/1361-6641/ab78f9 |
顯示於: | 電機工程學系 |
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