https://scholars.lib.ntu.edu.tw/handle/123456789/580637
標題: | Process simulation of pulsed laser annealing on epitaxial Ge on Si | 作者: | Lu C.-T Lu F.-L Tsai C.-E Huang W.-H CHEE-WEE LIU |
關鍵字: | Annealing; Carrier concentration; Chemical vapor deposition; Electron density measurement; Electrons; Germanium; Germanium compounds; High resolution transmission electron microscopy; Numerical methods; Phosphorus; Silicon; Solubility; Transmission electron microscopy; Cross sectional transmission electron microscopy; Electron concentration; Positive correlations; Process simulations; Pulsed laser annealing; Sheet electron density; Solid solubilities; Temperature dependent; Pulsed lasers | 公開日期: | 2017 | 卷: | 6 | 期: | 8 | 來源出版物: | ECS Journal of Solid State Science and Technology | 摘要: | Using a 3D numerical method, temperatures of pulsed laser annealed epi-Ge layers on SOI and bulk Si substrates are simulated. Epi-Ge is phosphorus-doped by in-situ chemical vapor deposition doping. Both the simulated melt depth and the measured sheet electron density of epi-Ge increases as the laser fluence increases. A strong positive correlation is observed between the simulated melt depth of epi-Ge and the measured sheet electron density. The sheet electron density is calculated using the temperature-dependent solid solubility, while the electron concentration for epi-Ge melted during pulsed laser annealing is assumed to be the liquid solubility of phosphorus at melting point. An intermixing between Ge and Si is observed by cross-sectional transmission electron microscopy, when both Si and epi-Ge are melted in the simulation. ? 2017 The Electrochemical Society. All rights reserved. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85033664581&doi=10.1149%2f2.0051708jss&partnerID=40&md5=a54930c54a9cbce45c905b8697ee5074 https://scholars.lib.ntu.edu.tw/handle/123456789/580637 |
ISSN: | 21628769 | DOI: | 10.1149/2.0051708jss |
顯示於: | 電機工程學系 |
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