https://scholars.lib.ntu.edu.tw/handle/123456789/580730
標題: | Ionic concentration sensing via nitrogen modified graphene through low-damage plasma treatment | 作者: | Tsai M.H Hsuan Lin C Huang C.H Yen Woon W CHIH-TING LIN |
關鍵字: | Chlorine compounds; Doping (additives); Electrolytes; Graphene; Nitrogen; Plasma applications; Potash; Potassium chloride; Aqueous environment; Dirac point; Electronic transport; Ionic concentrations; Modified parameters; Nitrogen doped graphene; Plasma treatment; Single layer; Nitrogen plasma | 公開日期: | 2019 | 卷: | 2019-October | 來源出版物: | Proceedings of IEEE Sensors | 摘要: | In this work, we modified the single layer graphene by nitrogen modification through the low-damage plasma treatment (LD-plasma). The electronic transport characteristics for different modified parameters under aqueous environment were performed by Agilent semiconductor analysis B1500A. We choose potassium chloride (KCl) as our electrolyte. Based on the experimental results, the Dirac point is shifted linearly with the concentration of KCl. At the same time, the experimental results also show that the behaviors of 1-min and 3-min modifications are quite different between each other because of modification to graphene structure. As a consequence, this work shows an opportunity of being an ionic sensor with the developed nitrogen-doped graphene. ? 2019 IEEE. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85078703678&doi=10.1109%2fSENSORS43011.2019.8956821&partnerID=40&md5=261a987b823d749a96a7e037dfd7fe4f https://scholars.lib.ntu.edu.tw/handle/123456789/580730 |
ISSN: | 19300395 | DOI: | 10.1109/SENSORS43011.2019.8956821 |
顯示於: | 電機工程學系 |
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