https://scholars.lib.ntu.edu.tw/handle/123456789/580945
標題: | A Unified Continuous and Discrete Model for Double-Gate MOSFETs with Spatially Varying or Pulsed Doping Profiles | 作者: | Hong C Zhou J Cheng Q Zhu K Kuo J.B Chen Y. JAMES-B KUO |
關鍵字: | Drain current; Eigenvalues and eigenfunctions; Poisson equation; Cartesian coordinate; Cylindrical coordinates; discrete dopant variations; Double gate MOSFET; Eigenfunction expansion methods; Numerical calculation; Surface field; Variable transformation; MOSFET devices | 公開日期: | 2017 | 卷: | 5 | 期: | 4 | 起(迄)頁: | 244-255 | 來源出版物: | IEEE Journal of the Electron Devices Society | 摘要: | This paper presents a unified continuous and discrete model covering all device operating regions of double-gate MOSFETs for the first time. With a specific variable transformation method, the 1-D Poisson's equation in the Cartesian coordinate for double-gate MOSFETs is transformed into the corresponding form in the cylindrical coordinate. Such a transformed cylindrical Poisson's equation results in a simple algebraic equation, which correlates the (inversion-charge induced) surface potential to the field and allows the long-channel drain-current formula to be derived from the Pao-Sah integral. This model can be readily applied to predict the effects of both continuous and discrete doping variations. The short-channel-effect model is also developed by solving the 2-D Poisson's equation using the eigenfunction-expansion method. The accuracy of both long-channel and short-channel models is confirmed by the numerical calculations and TCAD simulations. ? 2013 IEEE. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85028403782&doi=10.1109%2fJEDS.2017.2704106&partnerID=40&md5=52b20fc5b40d02dba1ae6ba2ba799fda https://scholars.lib.ntu.edu.tw/handle/123456789/580945 |
ISSN: | 21686734 | DOI: | 10.1109/JEDS.2017.2704106 |
顯示於: | 電機工程學系 |
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