https://scholars.lib.ntu.edu.tw/handle/123456789/580949
標題: | On the form of 1-D nonlinear Poisson’s equation and the concept of neutralization voltage for non-uniformly doped MOSFETs | 作者: | Hong C Kuo J.B Chen Y. JAMES-B KUO |
關鍵字: | Boundary conditions; Nonlinear equations; Poisson equation; Electrostatic potentials; Flat-band voltage; MOSFET modeling; MOSFETs; Oxide interfaces; Reference levels; TCAD simulation; MOSFET devices | 公開日期: | 2018 | 卷: | 17 | 期: | 1 | 起(迄)頁: | 211-216 | 來源出版物: | Journal of Computational Electronics | 摘要: | Various types of doped 1-D nonlinear Poisson’s equations existing in conventional and junctionless multi-gate MOSFET modeling literature are extensively examined. It is found that their reference levels used to define the potential in Poisson’s equation are different, and some of them are not compatible with the potential definition in the commonly used formula of oxide-interface boundary condition. Those correct equations are identified by showing their compatibility with the oxide-interface boundary condition and verified by TCAD simulations. Moreover, the necessity to introduce the concept of neutralization voltage to replace the flat-band voltage for non-uniformly doped MOSFETs is discussed. ? 2017, Springer Science+Business Media, LLC, part of Springer Nature. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85033595707&doi=10.1007%2fs10825-017-1112-6&partnerID=40&md5=eeb03f3086463eba89020b2ceb674b11 https://scholars.lib.ntu.edu.tw/handle/123456789/580949 |
ISSN: | 15698025 | DOI: | 10.1007/s10825-017-1112-6 |
顯示於: | 電機工程學系 |
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