|Title:||The demonstration of colossal magneto-capacitance and “negative” capacitance effect with the promising characteristics of Jg-EOT and transistor’s performance on Ge (100) n-FETs by the novel magnetic gate stack scheme design||Authors:||M.-H. Liao
S. C. Huang
C. Y. Liu
P. G. Chen
S. C. Kao
|Issue Date:||2014||Source:||2014 Symposium on VLSI Technology (VLSI-technology)||Description:||
|Appears in Collections:||機械工程學系|
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