https://scholars.lib.ntu.edu.tw/handle/123456789/606970
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Chiu J | en_US |
dc.contributor.author | Li S | en_US |
dc.contributor.author | Lee M | en_US |
dc.contributor.author | Yen C | en_US |
dc.contributor.author | Chen T | en_US |
dc.contributor.author | Chou C | en_US |
dc.contributor.author | CHEE-WEE LIU | en_US |
dc.date.accessioned | 2022-04-25T06:41:33Z | - |
dc.date.available | 2022-04-25T06:41:33Z | - |
dc.date.issued | 2021 | - |
dc.identifier.issn | 21686734 | - |
dc.identifier.uri | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85120085935&doi=10.1109%2fJEDS.2021.3130211&partnerID=40&md5=ebce5deb2246d84471c0375b6bd1c986 | - |
dc.identifier.uri | https://scholars.lib.ntu.edu.tw/handle/123456789/606970 | - |
dc.description.abstract | The double-layer a-IGZO thin film transistors (DL-TFTs) using a quantum well channel and a top barrier can reduce the subthreshold swing and hysteresis by 0.73x and 0.13x, respectively, in the transfer characteristics using the bottom gate sweep as compared to the single-layer TFTs (SL-TFTs). The wide bandgap barrier on top of the narrow bandgap IGZO channel serves as a protection layer between the IGZO channel and the SiO2 top gate insulator to prevent plasma-induced damage on the IGZO channel caused by the S/D metal etching and the top gate insulator deposition. As for the mobility using the bottom gate operation with the top gate grounded, the DL-TFTs show higher mobility (1.06x) at the room temperature due to less Coulomb scattering caused by the plasma-induced damage for percolation conduction, while the SL-TFTs have higher mobility at low temperatures due to the improved hopping efficiency for thermally activated hopping. The hysteresis is temperature independent down to 160 K, indicating the electrons tunneling between the channel and the top gate insulator is dominant. As for the reliability, DL-TFT has a smaller Vth shift than SL-TFT under both positive bias temperature stress (PBTS) due to less subgap defect in the channel. Author | - |
dc.relation.ispartof | IEEE Journal of the Electron Devices Society | - |
dc.subject | Amorphous InGaZnO (a-IGZO) | - |
dc.subject | band alignment | - |
dc.subject | double layers | - |
dc.subject | Etching | - |
dc.subject | Hysteresis | - |
dc.subject | In-Ga-Zn-O | - |
dc.subject | Insulators | - |
dc.subject | Logic gates | - |
dc.subject | Metals | - |
dc.subject | mobility enhancement | - |
dc.subject | Plasma temperature | - |
dc.subject | quantum well | - |
dc.subject | Thin film transistors | - |
dc.subject | thin-film transistor (TFT). | - |
dc.subject | Amorphous films | - |
dc.subject | Energy gap | - |
dc.subject | Gallium compounds | - |
dc.subject | Semiconducting indium compounds | - |
dc.subject | Semiconductor quantum wells | - |
dc.subject | Silica | - |
dc.subject | Solvents | - |
dc.subject | Thin film circuits | - |
dc.subject | Thin films | - |
dc.subject | Wide band gap semiconductors | - |
dc.subject | Zinc compounds | - |
dc.subject | Amorphous InGaZnO | - |
dc.subject | Band alignments | - |
dc.subject | C. thin film transistor (TFT) | - |
dc.subject | Double layers | - |
dc.subject | In-ga-zn-O | - |
dc.subject | Insulator | - |
dc.subject | Mobility enhancement | - |
dc.subject | Quantum-wells | - |
dc.subject | Thin-film transistor . | - |
dc.title | Performance Improvement by Double-Layer a-IGZO TFTs with a Top Barrier | en_US |
dc.type | journal article | en |
dc.identifier.doi | 10.1109/JEDS.2021.3130211 | - |
dc.identifier.scopus | 2-s2.0-85120085935 | - |
item.openairetype | journal article | - |
item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
item.cerifentitytype | Publications | - |
item.fulltext | no fulltext | - |
item.grantfulltext | none | - |
crisitem.author.dept | Electronics Engineering | - |
crisitem.author.dept | Photonics and Optoelectronics | - |
crisitem.author.dept | Electrical Engineering | - |
crisitem.author.dept | Center for Condensed Matter Sciences | - |
crisitem.author.dept | MediaTek-NTU Research Center | - |
crisitem.author.dept | Center for Artificial Intelligence and Advanced Robotics | - |
crisitem.author.orcid | 0000-0002-6439-8754 | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | Others: University-Level Research Centers | - |
crisitem.author.parentorg | Others: University-Level Research Centers | - |
crisitem.author.parentorg | Others: University-Level Research Centers | - |
Appears in Collections: | 電機工程學系 |
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