https://scholars.lib.ntu.edu.tw/handle/123456789/607038
標題: | Silicide-based photodetectors with localized surface plasmon resonance for mid-IR detection | 作者: | Syu H.-J Lai H.-H Sun R.-L CHING-FUH LIN |
關鍵字: | NiSi;Photodetector;Photoresponse;Plasmon;Schottky;Si;Silicide;Surface plasmon resonance;Carbon monoxide;Etching;Gold deposits;Infrared radiation;Light absorption;Nickel compounds;Photocurrents;Photodetectors;Photons;Plasmons;Silicides;Silicon wafers;Thermionic power generation;Average currents;Compound semiconductors;Etching process;Localized surface plasmon resonance;Photo detection;Schottky junctions;Schottky photodetectors;Thermionic effects | 公開日期: | 2021 | 卷: | 11741 | 來源出版物: | Proceedings of SPIE - The International Society for Optical Engineering | 摘要: | Nowadays, infrared (IR) photodetectors are mainly made from compound semiconductors due to the bandgap flexibility. However, compound semiconductors are mostly synthesized by expensive and energy-intensive epitaxy processes. Moreover, compound semiconductors are difficult to integrate with Si-based IC industry. Therefore, we used n-type Si (n-Si) wafers and thin NiSi to combine with localized surface plasmon resonance (LSPR) to form a Schottky IR detector. The incident IR light can induce thermionic effect to generate photocurrent, and the LSPR can enhance the light absorption and improve the photoresponse. The LSPR was created by NiSi covered inverted-pyramid array structures (IPAS) formed on n-Si substrates through photolithography and etching processes. After IPAS were prepared, 10-nm-thick Ni was thermally deposited on the IPAS and then the entire samples were annealed under 500 ℃ in 5 s to form NiSi/n-Si Schottky junctions. Finally, Ti and Au were thermally deposited successively on the NiSi and the back of n-Si wafers to be electrodes. A planar device was also prepared to be a control part. The photodetection ability of the device was examined by a 4.8-μm IR source with 1.8-mW optical power, which is in the absorption range of carbon monoxide. The IR source was turned on/off for each 15 s. Consequently, the planar NiSi/n-Si Schottky photodetector shows average 9.37-μA current change under 4.8-μm IR source illumination in 15 s. However, if 8-μm-period IPAS was used, the average current change improved to 30.9 μA. The response enhancement is 3.30 times of the planar device. ? 2021 SPIE |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85109605292&doi=10.1117%2f12.2586050&partnerID=40&md5=95f73fff464f2b260f83ed9d65967963 https://scholars.lib.ntu.edu.tw/handle/123456789/607038 |
ISSN: | 0277786X | DOI: | 10.1117/12.2586050 |
顯示於: | 電機工程學系 |
在 IR 系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。