https://scholars.lib.ntu.edu.tw/handle/123456789/607070
標題: | 4-QAM OFDM Data Switching via Free Carrier Absorption in Si-Rich SiC Waveguide | 作者: | Hsueh Y.-W Cheng C.-H Fu C.-S Wang H.-Y Huang B.-J GONG-RU LIN |
關鍵字: | 4-QAM OFDM;all-optical modulation;free carrier absorption;SiC material;Bandwidth;Bit error rate;Error correction;Forward error correction;Luminescence of organic solids;Optical fiber communication;Optical switches;Orthogonal frequency division multiplexing;Quadrature phase shift keying;Silicon carbide;Switching;Two photon processes;Waveguides;All optical;All-optical switching;Data bandwidth;Error vector magnitude;Free carrier absorption;Microrings;Silicon rich;Two photon absorption;Signal to noise ratio | 公開日期: | 2021 | 卷: | 27 | 期: | 3 | 來源出版物: | IEEE Journal of Selected Topics in Quantum Electronics | 摘要: | The all-optical cross-wavelength quadrature amplitude modulation orthogonal frequency-division multiplexing (QAM-OFDM) data switching in the silicon rich silicon carbide (Si-rich SiC) micro-ring (μ-ring) waveguide is demonstrated for the first time by using the two-photon absorption (TPA) induced free carrier absorption (FCA) process. With enlarging the allowable 4-QAM OFDM data bandwidth to 1.16 GHz, the all-optical 4-QAM OFDM pump-to-probe switching with allowable bandwidth of 1.16 GHz can achieve a raw data rate up to 2.32 Gbit/s with forward error correction (FEC) qualified error vector magnitude (EVM), signal-to-noise ratio (SNR), and bit-err-ratio (BER) of 31.9%, 9.92 dB, and 8.7 × 10-4, respectively. With upgrading the bandwidth of electrical pre-amplifier to 1.5 GHz, the wavelength-converted probe data can successfully pass the FEC criterion with qualified SNR of 9.49 dB, BER of 1.4 × 10-3 and EVM of 33.5%, to demonstrate the all-optical switching data rate approaching 3 Gbit/s. ? 1995-2012 IEEE. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85096362738&doi=10.1109%2fJSTQE.2020.3033282&partnerID=40&md5=ee464f4019046596328379599391ff92 https://scholars.lib.ntu.edu.tw/handle/123456789/607070 |
ISSN: | 1077260X | DOI: | 10.1109/JSTQE.2020.3033282 |
顯示於: | 電機工程學系 |
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