https://scholars.lib.ntu.edu.tw/handle/123456789/607191
標題: | Electromigration improvement by graphene on Cu wire for next generation VLSI | 作者: | Huang J.Z. Chang H.H. Huang K.P. Lee O.H. Chiu W.L. Jian H.J. Huang K.C Lo W.C. Hu J.S. Wu C.I. |
關鍵字: | Damascene;Electromigration;Graphene capping layer;Nanotwinned Cu;Electronics packaging;VLSI circuits;Capping layer;Compatible process;Cu damascene;Cu lines;Cu wires;Nanotwins;Reliability data;Graphene | 公開日期: | 2021 | 起(迄)頁: | 103-104 | 來源出版物: | 2021 International Conference on Electronics Packaging, ICEP 2021 | 摘要: | The electromigration (EM) failure mode of copper (Cu) interconnects poses a major reliability concern. It has been found that using graphene as a capping layer on Cu could improve the EM failure. However, no reliability data have been reported for graphene grown on Cu damascene structures with foundry’s back-end compatible process. In this study, we show that graphene can be selectively grown on Cu damascene structures as the capping layer on 12? wafers. An improvement in the EM lifetime was achieved through the graphene capping layer on the Cu line, and a nanotwin Cu structure with a graphene capping layer was also compared. ? 2021 IEEE. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85113284977&doi=10.23919%2fICEP51988.2021.9451979&partnerID=40&md5=36146267ba7b73067e6b1168a3fa5b9c https://scholars.lib.ntu.edu.tw/handle/123456789/607191 |
DOI: | 10.23919/ICEP51988.2021.9451979 |
顯示於: | 電機工程學系 |
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