https://scholars.lib.ntu.edu.tw/handle/123456789/607237
標題: | Investigation on helium ion beam lithography with proximity effect correction | 作者: | Lee C.-L Chien S.-W Tsai K.-Y Liu C.-H. KUEN-YU TSAI |
關鍵字: | ion beam lithography;point spread function;proximity effect correction;Electron beam lithography;Helium;Ion beam lithography;Ion beams;Ions;Iterative methods;Beam particles;Compensation mechanism;Correction method;Feedback compensation;Helium ion beams;Incident ions;Model-based OPC;Point-Spread function;Proximity-effect corrections;Scattering events;Optical transfer function | 公開日期: | 2021 | 卷: | 20 | 期: | 3 | 來源出版物: | Journal of Micro/Nanopatterning, Materials and Metrology | 摘要: | Our work presents and investigates the effectiveness of a model-based proximity effect correction method for helium ion beam lithography (HIBL). This method iteratively modulates the shape of a pattern by a feedback compensation mechanism until the simulated patterning fidelity satisfies specific constraints. A point spread function (PSF) is utilized to account for all phenomena involved during the scattering events of incident ion beam particles in the resist. Patterning prediction for subsequent correction process is derived from the energy intensity distribution due to convolution between the PSF and the pattern, with an adequate cut-off threshold. The performance of this method for HIBL is examined through several designed layouts from 15- to 5-nm in half pitches, under specific process parameters, including acceleration voltage, resist thickness, and resist sensitivity. Preliminary results show its effectiveness in improving the patterning fidelity of HIBL. ? 2021 Society of Photo-Optical Instrumentation Engineers (SPIE). |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85116437508&doi=10.1117%2f1.JMM.20.3.033201&partnerID=40&md5=99f934794de2f559f3bd1f7ae7be1407 https://scholars.lib.ntu.edu.tw/handle/123456789/607237 |
ISSN: | 19325150 | DOI: | 10.1117/1.JMM.20.3.033201 |
顯示於: | 電機工程學系 |
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