https://scholars.lib.ntu.edu.tw/handle/123456789/607239
標題: | A 28/39 GHz Dual-Band Power Amplifier Using Optimal Matching Contour in GaAs pHEMT | 作者: | Huang B.-W Fu Z.-H KUN-YOU LIN |
關鍵字: | 5G.;dual-band;GaAs;optimal matching contour;power amplifier;5G mobile communication systems;Gallium arsenide;III-V semiconductors;Power amplifiers;5g.;Dual Band;Matching networks;Measured results;Network design;Operating frequency bands;Optimal matching;Optimal matching contour;Power performance;Small signal gain;Semiconducting gallium | 公開日期: | 2021 | 來源出版物: | 2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021 | 會議論文: | 2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021 | 摘要: | In this paper, a dual-band power amplifier (PA) fabricated in 0.15-μm GaAs pHEMT process is presented. The concept of the optimal matching contour is used in the matching network design to minimize the loss in both operating frequency bands. Thus, this PA achieves good power performance in both frequency bands. The measured results of small-signal gain are 20/12 dB at 28/39 GHz, respectively. The saturated output power (Psat) is 21.9/22.7 dBm, the peak power-added efficiency (PAEmax) is 28.9/32.6%, and the OP1dB and corresponding PAE (PAE1dB) are 21.8/22.6 dBm and 28/32% at 28/39 GHz, respectively. ? 2021 IEEE. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85118188953&doi=10.1109%2fRFIT52905.2021.9565282&partnerID=40&md5=0e39c123ebcba3d60d72c14f75bf56e5 https://scholars.lib.ntu.edu.tw/handle/123456789/607239 |
DOI: | 10.1109/RFIT52905.2021.9565282 |
顯示於: | 電機工程學系 |
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