https://scholars.lib.ntu.edu.tw/handle/123456789/607372
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Shen H.-T | en_US |
dc.contributor.author | Chang Y.-C | en_US |
dc.contributor.author | Wu Y.-R. | en_US |
dc.contributor.author | YUH-RENN WU | zz |
dc.creator | Shen H.-T;Chang Y.-C;Wu Y.-R. | - |
dc.date.accessioned | 2022-04-25T06:43:32Z | - |
dc.date.available | 2022-04-25T06:43:32Z | - |
dc.date.issued | 2022 | - |
dc.identifier.issn | 18626254 | - |
dc.identifier.uri | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85119253392&doi=10.1002%2fpssr.202100498&partnerID=40&md5=5c89047fd4a233ad2986f645543d8ef7 | - |
dc.identifier.uri | https://scholars.lib.ntu.edu.tw/handle/123456789/607372 | - |
dc.description.abstract | For nitride-based AlGaN light-emitting diodes, the fluctuations in the potential caused by alloy disorder can relax the compressive strain in the lower Al (higher Ga) composition sites. However, strain in the quantum wells impacts the bandgap and the transverse magnetic/transverse electric (TE) polarization ratio. Herein, the 6 × 6 k·p method combined with a 3D Poisson, drift diffusion, and localization landscape solver is used to study the changes in the polarization ratio due to random alloy fluctuations. The influence of different Al compositions in the buffer layer is studied. The results show that the TM polarization ratio with alloy fluctuations is higher than that without fluctuations. On increasing the Al composition in the buffer layer, the polarization ratio changes from 0.93 to ?0.67 when the Al composition changes from 60% to 100%. ? 2021 Wiley-VCH GmbH | - |
dc.relation.ispartof | Physica Status Solidi - Rapid Research Letters | - |
dc.subject | Aluminum | - |
dc.subject | Aluminum alloys | - |
dc.subject | Aluminum gallium nitride | - |
dc.subject | Buffer layers | - |
dc.subject | Gallium alloys | - |
dc.subject | III-V semiconductors | - |
dc.subject | Polarization | - |
dc.subject | Semiconductor alloys | - |
dc.subject | Semiconductor quantum wells | - |
dc.subject | Al composition | - |
dc.subject | Alloy fluctuation | - |
dc.subject | Deep ultraviolet | - |
dc.subject | K-p method | - |
dc.subject | Lightemitting diode | - |
dc.subject | Polarization ratios | - |
dc.subject | Random alloy | - |
dc.subject | Ultraviolet light emitting diodes | - |
dc.subject | Ultraviolet light-emitting diodes | - |
dc.subject | UVC light-emitting diode | - |
dc.subject | Light emitting diodes | - |
dc.title | Analysis of Light-Emission Polarization Ratio in Deep-Ultraviolet Light-Emitting Diodes by Considering Random Alloy Fluctuations with the 3D k·p Method | en_US |
dc.type | journal article | en |
dc.identifier.doi | 10.1002/pssr.202100498 | - |
dc.identifier.scopus | 2-s2.0-85119253392 | - |
dc.relation.journalvolume | 16 | - |
dc.relation.journalissue | 2 | - |
item.cerifentitytype | Publications | - |
item.fulltext | no fulltext | - |
item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
item.openairetype | journal article | - |
item.grantfulltext | none | - |
crisitem.author.dept | Electrical Engineering | - |
crisitem.author.dept | Photonics and Optoelectronics | - |
crisitem.author.orcid | 0000-0002-1457-3681 | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
顯示於: | 電機工程學系 |
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