https://scholars.lib.ntu.edu.tw/handle/123456789/607505
標題: | Mobility Enhancement in P-Type SnO Thin-Film Transistors via Ni Incorporation by Co-Sputtering | 作者: | Hsu S.-M Yang C.-E Lu M.-H Lin Y.-T Yen H.-W I-CHUN CHENG HUNG-WEI YEN |
關鍵字: | Nickel;Optical films;Photonic band gap;Spectroscopy;Substrates;Temperature measurement;Thin film transistors;CMOS integrated circuits;Energy gap;Flexible electronics;Magnetrons;Nickel oxide;Oxide semiconductors;Sputtering;Thin film circuits;Thin films;Tin oxides;C. thin film transistor (TFT);CMOS technology;Cosputtering;High mobility;Ni thin films;Oxide TFTs;P-type;Photonic bandgap (PBG);Tin | 公開日期: | 2022 | 卷: | 43 | 期: | 2 | 起(迄)頁: | 228-231 | 來源出版物: | IEEE Electron Device Letters | 摘要: | Oxide semiconductors have been considered one of the most promising candidates for flexible electronics applications owing to their low process temperatures and good reliability. However, the low mobility of p-type oxide semiconductors limits the performance of flexible oxide-TFT-based CMOS technology. In this study, p-type SnO |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85122067109&doi=10.1109%2fLED.2021.3136966&partnerID=40&md5=5c7a0345078e3055158a278111b8e674 https://scholars.lib.ntu.edu.tw/handle/123456789/607505 |
ISSN: | 07413106 | DOI: | 10.1109/LED.2021.3136966 |
顯示於: | 光電工程學研究所 |
在 IR 系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。