https://scholars.lib.ntu.edu.tw/handle/123456789/614658
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Li M.; Chou Y.-C. | en_US |
dc.contributor.author | YI-CHIA CHOU | en_US |
dc.creator | Li M.; Lin C.-Y.; Chang Y.-M.; Yang S.-H.; Lee M.-P.; Chen C.-F.; Lee K.-C.; Yang F.-S.; Chou Y.; Lin Y.-C.; Ueno K.; Shi Y.; Chou Y.-C.; Tsukagoshi K.; Lin Y.-F. | - |
dc.date.accessioned | 2022-06-30T02:06:10Z | - |
dc.date.available | 2022-06-30T02:06:10Z | - |
dc.date.issued | 2020 | - |
dc.identifier.issn | 19448244 | - |
dc.identifier.uri | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85091589014&doi=10.1021%2facsami.0c09922&partnerID=40&md5=8af64060556da2ff0196f86c66468099 | - |
dc.identifier.uri | https://scholars.lib.ntu.edu.tw/handle/123456789/614658 | - |
dc.description.abstract | Flexible manipulation of the carrier transport behaviors in two-dimensional materials determines their values of practical application in logic circuits. Here, we demonstrated the carrier-type manipulation in field-effect transistors (FETs) containing α-phase molybdenum ditelluride (MoTe2) by a rapid thermal annealing (RTA) process in dry air for hole-dominated and electron-beam (EB) treatment for electron-dominated FETs. EB treatment induced a distinct shift of the transfer curve by around 135 V compared with that of the FET-processed RTA treatment, indicating that the carrier density of the EB-treated FET was enhanced by about 1 order of magnitude. X-ray photoelectron spectroscopy analysis revealed that the atomic ratio of Te decreased from 66.4 to 60.8% in the MoTe2 channel after EB treatment. The Fermi level is pinned near the new energy level resulting from the Te vacancies produced by the EB process, leading to the electron-dominant effect of the MoTe2 FET. The electron-dominated MoTe2 FET showed excellent stability for more than 700 days. Thus, we not only realized the reversible modulation of carrier-type in layered MoTe2 FETs but also demonstrated MoTe2 channels with desirable performance, including long-term stability. Copyright © 2020 American Chemical Society. | - |
dc.language | en-US | - |
dc.publisher | American Chemical Society | - |
dc.relation.ispartof | ACS Applied Materials and Interfaces | - |
dc.subject | Computer circuits; Electrons; Field effect transistors; Flexible electronics; Molybdenum compounds; Rapid thermal annealing; Rapid thermal processing; X ray photoelectron spectroscopy; Atomic ratio; Flexible manipulations; Long term stability; Molybdenum ditelluride; Rapid thermal annealing (RTA); Transfer curves; Transport behavior; Two-dimensional materials; Tellurium | - |
dc.title | Facile and Reversible Carrier-Type Manipulation of Layered MoTe2Toward Long-Term Stable Electronics | en_US |
dc.type | journal article | en |
dc.identifier.doi | 10.1021/acsami.0c09922 | - |
dc.identifier.pmid | 32864950 | - |
dc.identifier.scopus | 2-s2.0-85091589014 | - |
dc.relation.pages | 42918-42924 | - |
dc.relation.journalvolume | 12 | - |
dc.relation.journalissue | 38 | - |
item.cerifentitytype | Publications | - |
item.fulltext | no fulltext | - |
item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
item.openairetype | journal article | - |
item.grantfulltext | none | - |
crisitem.author.dept | Materials Science and Engineering | - |
crisitem.author.parentorg | College of Engineering | - |
顯示於: | 材料科學與工程學系 |
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