https://scholars.lib.ntu.edu.tw/handle/123456789/614658
標題: | Facile and Reversible Carrier-Type Manipulation of Layered MoTe2Toward Long-Term Stable Electronics | 作者: | Li M.; Chou Y.-C. YI-CHIA CHOU |
關鍵字: | Computer circuits; Electrons; Field effect transistors; Flexible electronics; Molybdenum compounds; Rapid thermal annealing; Rapid thermal processing; X ray photoelectron spectroscopy; Atomic ratio; Flexible manipulations; Long term stability; Molybdenum ditelluride; Rapid thermal annealing (RTA); Transfer curves; Transport behavior; Two-dimensional materials; Tellurium | 公開日期: | 2020 | 出版社: | American Chemical Society | 卷: | 12 | 期: | 38 | 起(迄)頁: | 42918-42924 | 來源出版物: | ACS Applied Materials and Interfaces | 摘要: | Flexible manipulation of the carrier transport behaviors in two-dimensional materials determines their values of practical application in logic circuits. Here, we demonstrated the carrier-type manipulation in field-effect transistors (FETs) containing α-phase molybdenum ditelluride (MoTe2) by a rapid thermal annealing (RTA) process in dry air for hole-dominated and electron-beam (EB) treatment for electron-dominated FETs. EB treatment induced a distinct shift of the transfer curve by around 135 V compared with that of the FET-processed RTA treatment, indicating that the carrier density of the EB-treated FET was enhanced by about 1 order of magnitude. X-ray photoelectron spectroscopy analysis revealed that the atomic ratio of Te decreased from 66.4 to 60.8% in the MoTe2 channel after EB treatment. The Fermi level is pinned near the new energy level resulting from the Te vacancies produced by the EB process, leading to the electron-dominant effect of the MoTe2 FET. The electron-dominated MoTe2 FET showed excellent stability for more than 700 days. Thus, we not only realized the reversible modulation of carrier-type in layered MoTe2 FETs but also demonstrated MoTe2 channels with desirable performance, including long-term stability. Copyright © 2020 American Chemical Society. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85091589014&doi=10.1021%2facsami.0c09922&partnerID=40&md5=8af64060556da2ff0196f86c66468099 https://scholars.lib.ntu.edu.tw/handle/123456789/614658 |
ISSN: | 19448244 | DOI: | 10.1021/acsami.0c09922 |
顯示於: | 材料科學與工程學系 |
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