https://scholars.lib.ntu.edu.tw/handle/123456789/614675
Title: | Interdiffusion of Cu-Sn system with Ni ultra-thin buffer layer and material analysis of IMC growth mechanism | Authors: | Fan C.-H.; Chang Y.-J.; Chou Y.-C.; Chen K.-N. YI-CHIA CHOU |
Keywords: | Binary alloys; Budget control; Copper alloys; Diffusion; Nickel; Scanning electron microscopy; Tin alloys; Bonding conditions; Bonding temperatures; Growth mechanisms; IMC thickness; Material analysis; Rapid growth; Thermal budget; Ultra-thin; Buffer layers | Issue Date: | 2014 | Publisher: | Institute of Electrical and Electronics Engineers Inc. | Start page/Pages: | 37-40 | Source: | 2014 9th International Microsystems, Packaging, Assembly and Circuits Technology Conference: Challenges of Change - Shaping the Future, IMPACT 2014 - Proceedings | Abstract: | In this paper, Ni ultra-thin diffusion buffer layer between Cu/Sn is inserted to suppress the IMC (η-phase) inter-diffusion reaction. We analogy the bonding condition by using single side Cu/Ni buffer layer/Sn structure. The inter-diffusion behaviors and IMC growth are investigated under the same thermal budget of bonding temperature during the heating step. Cu/Sn IMC formation behavior with Ni buffer layer is summarized by the SEM inspection. In the results of different Ni buffer layers (tNi = 0, 50, 100, 150 Å) and thermal durations (0 to 60 sec), Ni buffer layer insertion can effectively reduce Cu/Sn IMC thickness. In addition, rapid growth of ∼1.5 μm Cu/Sn IMC thickness at 250 °C for only 10 sec is discovered. As results, 100 Å Ni buffer layer is necessary to apply as the Cu/Sn system enters the submicron pad bonding interconnects. © 2014 IEEE. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-84925878373&doi=10.1109%2fIMPACT.2014.7048448&partnerID=40&md5=1063eb54194661bd69351e713d11c0a8 https://scholars.lib.ntu.edu.tw/handle/123456789/614675 |
ISBN: | 9.78148E+12 | DOI: | 10.1109/IMPACT.2014.7048448 |
Appears in Collections: | 材料科學與工程學系 |
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