https://scholars.lib.ntu.edu.tw/handle/123456789/626477
標題: | Dynamics of transient hole doping in epitaxial graphene | 作者: | Mhatre, SM Tran, NTM Hill, HM Saha, D Walker, ARH CHI-TE LIANG Elmquist, RE Newell, DB Rigosi, AF |
關鍵字: | HALL RESISTANCE STANDARDS; ADSORPTION; ELECTRON; DEVICES; PHOTODETECTOR; GENERATION; SCATTERING; TRANSPORT; WATER | 公開日期: | 2022 | 出版社: | AMER PHYSICAL SOC | 卷: | 105 | 期: | 20 | 來源出版物: | PHYSICAL REVIEW B | 摘要: | This work reports the dynamics of transient hole doping in epitaxial graphene devices by using nitric acid as an adsorbent. The timescales associated with corresponding desorption processes are extracted from the data. The understanding of reversible hole doping without gating is of crucial importance to those fabricating devices with a particular functionality. Measurements of the electrical and optical properties of several devices postexposure were performed with transport temperatures between 300 and 1.5 K. Ambient conditions are applied to nontransport measurements to replicate the most likely laboratory conditions for handling devices using this doping method. The relevant timescales from transport measurements are compared with results from Raman spectroscopy measurements. |
URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/626477 https://www.scopus.com/inward/record.uri?eid=2-s2.0-85131362843&doi=10.1103%2fPhysRevB.105.205423&partnerID=40&md5=b17404e2c1982828c5b69c972007d512 |
ISSN: | 2469-9950 | DOI: | 10.1103/PhysRevB.105.205423 | SDG/關鍵字: | Graphene; Optical properties; Ambient conditions; Desorption process; Electrical and optical properties; Epitaxial graphene; Hole-doping; Laboratory conditions; Measurements of; Most likely; Post-exposure; Time-scales; Graphene devices |
顯示於: | 物理學系 |
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