https://scholars.lib.ntu.edu.tw/handle/123456789/629803
標題: | Perfecting high-κ/Ge and /InGaAs interfaces - push for ultimate CMOS and emerging cryogenic electronic devices | 作者: | Young, L. B. Lin, Y. H.G. Wan, H. W. Cheng, Y. T. CHIA-KUEN CHENG CHIH-HUNG HSU Pi, T. W. Kwo, J. Hong, M. |
公開日期: | 1-一月-2022 | 來源出版物: | Proceedings of 2022 IEEE 16th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2022 | 摘要: | This paper reviews our work on perfecting high-κ/epi-Si/Ge and high-κ/InGaAs interfaces using in-situ HfO2 and Y2O3, respectively. The heterostructures were grown in our designed ultra-high vacuum (UHV) deposition/ analysis system. The perspective of the work on the related technologies is given. We have employed high-resolution synchrotron radiation photoemission and X-ray diffraction to study the electronic structures and the crystallography of the in-situ prepared gate stacks. Using the in-situ HfO2 on epi-Si/Ge, low interface state density (Dit) values of (2-4) × 1011 eV-1 cm-2 and small charge trapping with a high acceleration factor (γ) of 11 were achieved simultaneously; these are comparable to the state-of-the-art results in the Ge MOS devices using GeOx-based gate stack and thin Si cap via chemical vapor deposition, respectively. The in-situ Y2O3 has effectively passivated InGaAs surface in attaining record-low Dit values of (2-4) × 1011 eV-1cm-2 and high thermal stability of 800 among the high-κ/InGaAs heterostructures. The results have enabled the attainment of record-low subthreshold slope (SS) values in planar inversion-channel InGaAs metal-oxide-semiconductor field-effect-transistors (MOSFETs). The SS values of 22 mV/dec at 77 K and a slope factor m of 1.33, the lowest among the planar InGaAs MOSFETs, were achieved, which are comparable to those obtained in the ultra-thin-body InGaAs FinFETs. |
URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/629803 | ISBN: | 9781665469067 | DOI: | 10.1109/ICSICT55466.2022.9963224 |
顯示於: | 園藝暨景觀學系 |
在 IR 系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。