https://scholars.lib.ntu.edu.tw/handle/123456789/631456
標題: | Demonstration of High Endurance and Retention Spin-Transfer-Torque-Assisted Field-Free Perpendicular Spin-Orbit Torque Cells by an Etch-Stop-on-MgO Process | 作者: | Tsou, Ya Jui WEI-JEN CHEN Liu, Chin Yu Chen, Yi Ju Li, Kai Shin Shieh, Jia Min Liu, Pang Chun Chung, Wei Yuan CHEN-WUING LIU SSU-YEN HUANG Wei, Jeng Hua Tang, Denny D. Sun, Jack Yuan Chen |
關鍵字: | Etch-stop | field-free spin-orbit torque | magnetic domain | spin-transfer torque | stray magnetic field | 公開日期: | 1-十月-2022 | 出版社: | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | 卷: | 43 | 期: | 10 | 起(迄)頁: | 1661 | 來源出版物: | IEEE Electron Device Letters | 摘要: | Back-end-of-line compatible 400°C thermally robust perpendicular spin-orbit torque (p-SOT) cells with reduced MgO short fails are demonstrated by the etch-stop-on-MgO process. The stop-on-MgO cell features the SOT channel continuity and no metal redeposition at MgO sidewall after ion beam etching. To the best of our knowledge, the endurance as high as 1010 cycles using the field-free spin-transfer torque (STT) assisted SOT writing is achieved for the first time. The SOT switching current density can be reduced by increasing the STT current density to save write energy. The stop-on-MgO cell does not degrade the cell switching speed, since the switching always starts from the inner free layer and the domain propagation at the extended free layer does not affect junction resistance, as shown by micromagnetic simulation. The simulation also reveals that the thermal stability factor of stop-on-MgO cells is enhanced by the extended free layer, which suffers less from the interference of pinned layer edge stray field. |
URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/631456 | ISSN: | 07413106 | DOI: | 10.1109/LED.2022.3196349 |
顯示於: | 電機工程學系 |
在 IR 系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。