https://scholars.lib.ntu.edu.tw/handle/123456789/632066
標題: | The effect of tensile strain on optical anisotropy and exciton of m-plane ZnO | 作者: | Wang H.H Tian J.S Chen C.Y Huang H.H Yeh Y.C Deng P.Y Chang L Chu Y.H YUH-RENN WU He J.H. |
關鍵字: | II-VI semiconductor materials; Optical films; optical polarization; photoluminescence; strain | 公開日期: | 2015 | 卷: | 7 | 期: | 2 | 來源出版物: | IEEE Photonics Journal | 摘要: | The near band edge emission of the tensile-strained m-plane ZnO film grown on (112)LaAlO3 substrates shows abnormal low polarization degree (ρ = 0.1). The temperature dependency of polarization degree clarifies the origins of different emission peaks. In tensile-strained m-plane ZnO, the [0001] polarized state is upper shifted and is overlapping with the [112¯0] polarized state. This phenomenon causes the abnormal low polarization degree and reveals the effect of strain on the emission anisotropy of m-plane ZnO. © 2015 IEEE. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-84927127783&doi=10.1109%2fJPHOT.2015.2415672&partnerID=40&md5=2175d112c6848c7bfc0a0886ce170c56 https://scholars.lib.ntu.edu.tw/handle/123456789/632066 |
ISSN: | 19430655 | DOI: | 10.1109/JPHOT.2015.2415672 | SDG/關鍵字: | Anisotropy; Films; Light polarization; Optical films; Photoluminescence; Polarization; Semiconductor materials; Strain; Zinc oxide; Effect of strain; Emission anisotropy; Emission peaks; Ii - vi semiconductor materials; Near band edge emissions; Polarization degree; Polarized state; Temperature dependencies; Tensile strain |
顯示於: | 電機工程學系 |
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