https://scholars.lib.ntu.edu.tw/handle/123456789/632139
標題: | Ultra-thin Hf0.5Zr0.5O2ferroelectric tunnel junction with high current density | 作者: | Chu Y.-H Huang H.-H Chen Y.-H Hsu C.-H Tzeng P.-J Sheu S.-S Lo W.-C CHIH-I WU Hou T.-H. |
公開日期: | 2021 | 來源出版物: | VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings | 摘要: | Ferroelectric tunnel junction (FTJ) with ultrathin 3 nm-thick Hf0.5Zr0.5O2 (HZO) is investigated. The high current density up to 100 A/cm2 is at least 10 times higher than that in previously reported HZO FTJs. It is suitable for future nanoscale FTJ with a GΩ cell resistance for the application of in-memory computing. The insertion of a thin Al2O3 interfacial layer is found critical to alter the switching polarity and increase current density. © 2021 IEEE. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85108139527&doi=10.1109%2fVLSI-TSA51926.2021.9440107&partnerID=40&md5=99355d3fcd28c3eaec8b37193f4c7307 https://scholars.lib.ntu.edu.tw/handle/123456789/632139 |
DOI: | 10.1109/VLSI-TSA51926.2021.9440107 | SDG/關鍵字: | Alumina; Aluminum oxide; Current density; Electron emission; Hafnium compounds; VLSI circuits; Zirconium compounds; Cell resistance; Ferroelectric tunnel junctions; High current densities; Interfacial layer; Nano scale; Ultra-thin; Tunnel junctions |
顯示於: | 電機工程學系 |
在 IR 系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。