https://scholars.lib.ntu.edu.tw/handle/123456789/632145
標題: | Stray field and combined effects on device miniaturization of the magnetic tunnel junctions | 作者: | Cheng C.-W Chen K.-M Wei J.-H Hsin Y.-C Sheu S.-S CHIH-I WU Tseng Y.-C. |
關鍵字: | Dzyaloshinskii-Moriya interactions; magnetic tunnel junction; micromagnetic simulation; sidewall etching damage; spin-transfer torque; stray field | 公開日期: | 2022 | 卷: | 55 | 期: | 19 | 來源出版物: | Journal of Physics D: Applied Physics | 摘要: | Magneto-static stray field (H stray) interactions become an important issue when perpendicular CoFeB/MgO magnetic tunnel junctions (MTJs) are miniaturized. This raises the issue of which of the two mainstream etching processes, the pillar structure and the step structure, is better able to retain MTJ performance at extremely small scales. In the current study, we first simulated H stray effects as a function of Ruderman-Kittel-Kasuya-Yosida strength within a synthetic antiferromagnetic structure for the two structures. Our results revealed that H stray interactions were less influential (in terms of offset field) in step MTJs than in pillar MTJs during MTJ miniaturization. This is in good agreement with experimental results. This finding is further supported by adding Dzyaloshinskii-Moriya interactions into the free-layer of the two structures. We further simulated thermal stability with the inclusion of H stray for 30 nm MTJs. We found that adding etching damage effects (i.e. assuming both anisotropy constant and saturation magnetization of the free layer had some degree of loss) into the model of the pillar MTJ was necessary to obtain a trend that is close to the experimental results of thermal stability. This information can provide some guidance on the technical choices for the MTJ miniaturization. © 2022 IOP Publishing Ltd. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85125441537&doi=10.1088%2f1361-6463%2fac5147&partnerID=40&md5=5c933a3fe2ec31223547a285ee1029f6 https://scholars.lib.ntu.edu.tw/handle/123456789/632145 |
ISSN: | 00223727 | DOI: | 10.1088/1361-6463/ac5147 | SDG/關鍵字: | Etching; Magnetic devices; Miniature instruments; Saturation magnetization; Thermodynamic stability; Tunnel junctions; Dzyaloshinskii-Moriya interaction; Etching damages; Field-effect; Free layers; Magnetic tunnel junction; Micromagnetic simulations; Miniaturisation; Sidewall etching damage; Spin transfer torque; Stray field; Cobalt compounds |
顯示於: | 電機工程學系 |
在 IR 系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。