https://scholars.lib.ntu.edu.tw/handle/123456789/632146
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Huang J.-Z | en-US |
dc.contributor.author | Ni I.-C | en-US |
dc.contributor.author | Hsu Y.-H | en-US |
dc.contributor.author | Li S.-W | en-US |
dc.contributor.author | Chan Y.-C | en-US |
dc.contributor.author | Yang S.-Y | en-US |
dc.contributor.author | Lee M.-H | en-US |
dc.contributor.author | Shue S.-L | en-US |
dc.contributor.author | Chen M.-H | en-US |
dc.contributor.author | CHIH-I WU | en-US |
dc.creator | Huang J.-Z;Ni I.-C;Hsu Y.-H;Li S.-W;Chan Y.-C;Yang S.-Y;Lee M.-H;Shue S.-L;Chen M.-H;Wu C.-I. | - |
dc.date.accessioned | 2023-06-09T07:31:20Z | - |
dc.date.available | 2023-06-09T07:31:20Z | - |
dc.date.issued | 2022 | - |
dc.identifier.issn | 2632959X | - |
dc.identifier.uri | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85129260077&doi=10.1088%2f2632-959X%2fac3388&partnerID=40&md5=e1bfd43195405332070ed8f8152fcbda | - |
dc.identifier.uri | https://scholars.lib.ntu.edu.tw/handle/123456789/632146 | - |
dc.description.abstract | A furnace-free inductively coupled plasma chemical vapor deposition (ICP-PECVD) system, which does not require sample heating, was used to grow graphene at a temperature below 300 °C. This studies have found that under low-temperature PECVD growth conditions, liquid precursors are more suitable for preparing low-temperature graphene precursors than gaseous precursors. Hence, benzene is used as a carbon precursor to obtain a sheet resistance of approximately 1.24 kω sq-1. In this research, it was discovered that the carbon-hydrogen ratio of the precursor molecule is an important factor while using PECVD to grow graphene. This factor affects the quality of graphene and the sheet resistance value - when the carbon-hydrogen ratio for the precursor molecule is 1:1, graphene has the high quality and lowest sheet resistance; when it is less than 1:2, the graphene that cannot be deposited has the worst quality and sheet resistance. Furthermore, we found that methane, a precursor often used to deposit graphene, will etch graphene under low-temperature conditions, and that acetylene can be used as a precursor to deposit graphene. It was further proven that the carbon-hydrogen ratio of the precursor molecules in the PECVD process caused the reduction in the graphene temperature. © 2022 The Author(s). Published by IOP Publishing Ltd. | - |
dc.relation.ispartof | Nano Express | - |
dc.subject | carbon-to-hydrogen ratio; graphene; ICP-PECVD; liquid-based carbon precursors; low temperature | - |
dc.subject.other | Deposits; Graphene; Hydrogen; Inductively coupled plasma; Low temperature effects; Molecules; Plasma CVD; Carbon precursors; Carbon-to-hydrogen ratio; High quality; Hydrogen ratio; Inductively coupled plasma chemical vapor deposition; Liquid-based carbon precursor; Lows-temperatures; Precursor molecules; Sample heating; Vapor deposition systems; Temperature | - |
dc.title | Low-temperature synthesis of high-quality graphene by controlling the carbon-hydrogen ratio of the precursor | en_US |
dc.type | journal article | en |
dc.identifier.doi | 10.1088/2632-959X/ac3388 | - |
dc.identifier.scopus | 2-s2.0-85129260077 | - |
dc.relation.journalvolume | 3 | - |
dc.relation.journalissue | 1 | - |
item.openairetype | journal article | - |
item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
item.fulltext | no fulltext | - |
item.grantfulltext | none | - |
item.cerifentitytype | Publications | - |
crisitem.author.dept | Photonics and Optoelectronics | - |
crisitem.author.dept | Electrical Engineering | - |
crisitem.author.orcid | 0000-0003-3613-7511 | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
Appears in Collections: | 電機工程學系 |
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