https://scholars.lib.ntu.edu.tw/handle/123456789/632150
標題: | Contact Engineering for High-Performance N-Type 2D Semiconductor Transistors | 作者: | Lin Y Shen P.-C Su C Chou A.-S Wu T Cheng C.-C Park J.-H Chiu M.-H Lu A.-Y Tang H.-L Tavakoli M.M Pitner G Ji X McGahan C Wang X Cai Z Mao N Wang J Wang Y Tisdale W Ling X Aidala K.E Tung V Li J Zettl A CHIH-I WU Guo J Wang H Bokor J Palacios T Li L.-J Kong J. |
公開日期: | 2021 | 卷: | 2021-December | 起(迄)頁: | 37.2.1-37.2.4 | 來源出版物: | Technical Digest - International Electron Devices Meeting, IEDM | 摘要: | Two-dimensional (2D) semiconductors are expected to have exceptional properties for ultimately scaled transistors, but forming ohmic contact to them has been challenging, which tremendously limit the transistor performance. In this paper, we review the recent research progress on the elimination of different gap-state pinning effects, including defect-induced gap states (DIGS) and metal-induced gap states (MIGS). Specifically, an oxygen passivation method and a semimetallic contact technology were developed to reduce the DIGS and MIGS, respectively. Based on these approaches, much improved contact resistance and on-state current were observed. Key device metrics were extracted on these high-performance transistors, which reveals future directions for further improving the device performance. © 2021 IEEE. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85126947629&doi=10.1109%2fIEDM19574.2021.9720668&partnerID=40&md5=f71402a6070062a23935f7e8bcf1ed1a https://scholars.lib.ntu.edu.tw/handle/123456789/632150 |
ISSN: | 01631918 | DOI: | 10.1109/IEDM19574.2021.9720668 | SDG/關鍵字: | Ohmic contacts; Defects induced; Gap state; Induced gap state; Metal-induced gap state; Performance; Property; Recent researches; Semiconductor transistors; Transistor performance; Two-dimensional; Transistors |
顯示於: | 電機工程學系 |
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