https://scholars.lib.ntu.edu.tw/handle/123456789/632151
標題: | BEOL-Compatible multiple metal-ferroelectric-metal (m-MFM) FETs designed for low voltage (2.5 V), high density, and excellent reliability | 作者: | Yan M.-H Wu M.-H Huang H.-H Chen Y.-H Chu Y.-H Wu T.-L Yeh P.-C Wang C.-Y Lin Y.-D Su J.-W Tzeng P.-J Sheu S.-S Lo W.-C CHIH-I WU Hou T.-H. |
公開日期: | 2020 | 卷: | 2020-December | 起(迄)頁: | 4.6.1-4.6.4 | 來源出版物: | Technical Digest - International Electron Devices Meeting, IEDM | 摘要: | An experiment-calibrated SPICE model considering dynamic ferroelectric switching and charge injection is established to co-optimize memory window, write speed, endurance, and retention of MFMFET where a standard BEOL HfZrOx MFM capacitor is stacked on top of the logic transistor. This promising SOC-compatible, low-power and low-voltage embedded memory achieves a high current on-off ratio > 104 when programming at ±2.5 V for 3 μs without compromising 10-year retention and MFM-equivalent endurance. A novel m-MFMFET utilizing multiple MFMs is also proposed. m-MFMFET achieves equivalent performance as the standard MFMFET but further reduces the unit cell size by 22 %. © 2020 IEEE. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85102921157&doi=10.1109%2fIEDM13553.2020.9371916&partnerID=40&md5=d3af1e1dc30c16500233e14813738791 https://scholars.lib.ntu.edu.tw/handle/123456789/632151 |
ISSN: | 01631918 | DOI: | 10.1109/IEDM13553.2020.9371916 | SDG/關鍵字: | Electron devices; Hafnium compounds; Zirconium compounds; Embedded memory; Ferroelectric switching; High currents; Memory window; Multiple metals; On-off ratio; SPICE modeling; Unit cell size; Ferroelectricity |
顯示於: | 電機工程學系 |
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