https://scholars.lib.ntu.edu.tw/handle/123456789/632152
標題: | Area Scalable Hafnium-Zirconium-Oxide Ferroelectric Capacitor Using Low-Temperature Back-End-of-Line Compatible 40°C Annealing | 作者: | Huang T.-S Yeh P.-C Yang H.-Y Lin Y.-D Tzeng P.-J Sheu S.-S Lo W.-C CHIH-I WU Hou T.-H. |
公開日期: | 2022 | 來源出版物: | 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022 | 摘要: | Improving the area scalability and reducing the process temperature of Hf0.5Zr0.5O2 (HZO) ferroelectric (FE) capacitors are two of the most critical challenges in future back-end-of-line (BEOL) compatible FE memories. This paper presents the first study demonstrating the existence of a tradeoff between the area scalability and the annealing temperature, suggesting that these two should be optimized simultaneously rather than separately. Optimizing the HZO thickness and Hf:Zr ratio are identified to improve the tradeoff. High remanent polarization density of 24 µC/cm2 and excellent endurance of 9×109 cycles are achieved in a scaled FE area as small as 0.6×0.6 µm2 by using the BEOL-compatible 400°C annealing. © 2022 IEEE. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85130478872&doi=10.1109%2fVLSI-TSA54299.2022.9771032&partnerID=40&md5=116eab2afc36dc0629ea05e385af9023 https://scholars.lib.ntu.edu.tw/handle/123456789/632152 |
DOI: | 10.1109/VLSI-TSA54299.2022.9771032 | SDG/關鍵字: | Annealing; Ferroelectricity; Hafnium oxides; Temperature; Zirconium compounds; Annealing temperatures; Back end of lines; Critical challenges; Ferroelectric capacitors; Ferroelectric memory; Lows-temperatures; Polarization density; Process temperature; Zirconia oxide; Scalability |
顯示於: | 電機工程學系 |
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