https://scholars.lib.ntu.edu.tw/handle/123456789/632167
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Hsu L.-H | en-US |
dc.contributor.author | CHIEN-CHUNG LIN | en-US |
dc.contributor.author | Hwang Y.-C | en-US |
dc.contributor.author | Su C.-F | en-US |
dc.contributor.author | Lin S.-Y | en-US |
dc.contributor.author | Kuo H.-C. | en-US |
dc.creator | Hsu L.-H;Lin C.-C;Hwang Y.-C;Su C.-F;Lin S.-Y;Kuo H.-C. | - |
dc.date.accessioned | 2023-06-09T07:39:58Z | - |
dc.date.available | 2023-06-09T07:39:58Z | - |
dc.date.issued | 2015 | - |
dc.identifier.uri | https://www.scopus.com/inward/record.uri?eid=2-s2.0-84961658133&doi=10.1109%2fPVSC.2015.7355923&partnerID=40&md5=cc5d2dae0e9ab6752f59d9d909447e70 | - |
dc.identifier.uri | https://scholars.lib.ntu.edu.tw/handle/123456789/632167 | - |
dc.description.abstract | The InN capped with GaN structures is promising for extended visible and infrared absorption. The low growth temperature of GaN/InN epitaxy was fabricated by a low-pressure metal organic chemical vapor deposition system. The strain effect and mixed InxGa1-xN complex of the GaN/InN layer were investigated via Raman and photoluminescence (PL) measurements. The capping GaN with similar growth temperature of previous InN growth induces the gallium diffusion mechanism to form InxGa1-xN complex. The blue-shift phenomenon of multiple GaN/InN peaks with increasing growth temperature was attributed to residual strain and higher Ga content of InGaN. A ZnO/GaN/InN photodetection device is demonstrated with extended IR response, and the quantum efficiency is 2.28%. © 2015 IEEE. | - |
dc.relation.ispartof | 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015 | - |
dc.subject | Indium compounds; Infrared; nanostructured materials; photodetection devices | - |
dc.subject.other | Epitaxial growth; Growth temperature; Indium compounds; Infrared radiation; Light absorption; Metallorganic chemical vapor deposition; Nanostructured materials; Optical properties; Organic chemicals; Organometallics; Photodetectors; Semiconductor quantum wells; Blue shift phenomenon; Gallium diffusion; Low growth temperature; Low-pressure metal-organic chemical vapor depositions; Photo detection; Photoluminescence measurements; Residual strains; Strain effect; Gallium nitride | - |
dc.title | Optical properties of InN-based photodetection devices | en_US |
dc.type | conference paper | en |
dc.identifier.doi | 10.1109/PVSC.2015.7355923 | - |
dc.identifier.scopus | 2-s2.0-84961658133 | - |
item.fulltext | no fulltext | - |
item.openairecristype | http://purl.org/coar/resource_type/c_5794 | - |
item.cerifentitytype | Publications | - |
item.openairetype | conference paper | - |
item.grantfulltext | none | - |
crisitem.author.dept | Electrical Engineering | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
顯示於: | 電機工程學系 |
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