https://scholars.lib.ntu.edu.tw/handle/123456789/632204
標題: | High performance Ge junctionless gate-all-around NFETs with simultaneous Ion =1235 μa/μm at Vov=Vds=1V, SS=95 mV/dec, high Ion/Ioff=2?106, and reduced noise power density using S/D dopant recovery by selective laser annealing | 作者: | Wong I.-H Lu F.-L Huang S.-H Ye H.-Y Lu C.-T Yan J.-Y Shen Y.-C Peng Y.-J Lan H.-S CHEE-WEE LIU |
公開日期: | 2017 | 起(迄)頁: | 33.6.1-33.6.4 | 來源出版物: | Technical Digest - International Electron Devices Meeting, IEDM | 摘要: | The low channel doping concentrations of 1.2?1019 cm-3 to deplete the channel and the high S/D doping of 1.2?1020 cm-3 to reduce the S/D resistance are achieved simultaneously by selective laser annealing on the same CVD P-doped epi-Ge on SOI without ion implantation. The device with Wfin down to 7 nm, EOT = 2.2 nm, and Lch = 60 nm has Ion = 1146 μA/pm, Ion/Ioff = 2?106, and SS = 95 mV/dec. The Ion can be further boost to 1235 μA/μm with external uniaxial tensile strain of 0.16%. The self-heating effect is responsible in part for such high Ion, because the high device temperature can reduce the dominant impurity scattering in the channel. The increasing mobility with increasing temperature indicates the impurity scattering is dominant. The lower low frequency noise is observed with junctionless (JL) gate-all-around (GAA) FETs than planar inversion mode (INV) devices due to the bulk conduction nature of JL FETs. © 2016 IEEE. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85014463554&doi=10.1109%2fIEDM.2016.7838536&partnerID=40&md5=c304693ef70d886a55bd935976bae3f1 https://scholars.lib.ntu.edu.tw/handle/123456789/632204 |
ISSN: | 1631918 | DOI: | 10.1109/IEDM.2016.7838536 | SDG/關鍵字: | Annealing; Doping (additives); Electron devices; Germanium; Ion implantation; Tensile strain; Bulk conduction; Device temperature; Impurity scattering; Increasing temperatures; Inversion modes; Low-Frequency Noise; Self-heating effect; Uniaxial tensile strain; Ions |
顯示於: | 電機工程學系 |
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