https://scholars.lib.ntu.edu.tw/handle/123456789/632213
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Cheng C.-Y | en-US |
dc.contributor.author | Hsieh W.-H | en-US |
dc.contributor.author | Huang B.-W | en-US |
dc.contributor.author | Liu Y.-C | en-US |
dc.contributor.author | Tu C.-T | en-US |
dc.contributor.author | Tsai C.-E | en-US |
dc.contributor.author | Chueh S.-J | en-US |
dc.contributor.author | Chen G.-H | en-US |
dc.contributor.author | CHEE-WEE LIU | en-US |
dc.creator | Cheng C.-Y;Hsieh W.-H;Huang B.-W;Liu Y.-C;Tu C.-T;Tsai C.-E;Chueh S.-J;Chen G.-H;Liu C.W. | - |
dc.date.accessioned | 2023-06-09T07:40:13Z | - |
dc.date.available | 2023-06-09T07:40:13Z | - |
dc.date.issued | 2022 | - |
dc.identifier.uri | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85130429580&doi=10.1109%2fVLSI-TSA54299.2022.9770969&partnerID=40&md5=ccd1d243b928cce939a68a43c0c95615 | - |
dc.identifier.uri | https://scholars.lib.ntu.edu.tw/handle/123456789/632213 | - |
dc.description.abstract | The 6 stacked Ge0.95Si0.05 nanowires without parasitic channels are realized by NH4OH + H2O2 wet etching. High ION per stack and per footprint are achieved thanks to the nanowire conduction and the electrons populated in the high mobility L4 valleys. The reduced SS of 80 mV/dec and improved ION/IOFF of 1.5E5 are obtained by the removal of parasitic channels compared to the 7 stacked Ge0.95Si0.05 nanowires with the parasitic channels in our previous work. The high ION of 120 µA per stack (4600 µA/µm per channel footprint) at VOV = VDS = 0.5 V is reached among the Ge/GeSi 3D nFETs. © 2022 IEEE. | - |
dc.relation.ispartof | 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022 | - |
dc.subject.other | Ammonium hydroxide; Ions; Silicon; Silicon compounds; Wet etching; High mobility; Parasitics; Nanowires | - |
dc.title | 6 Stacked Ge0.95Si0.05nGAAFETs without Parasitic Channels by Wet Etching | en_US |
dc.type | conference paper | en |
dc.identifier.doi | 10.1109/VLSI-TSA54299.2022.9770969 | - |
dc.identifier.scopus | 2-s2.0-85130429580 | - |
item.openairetype | conference paper | - |
item.openairecristype | http://purl.org/coar/resource_type/c_5794 | - |
item.fulltext | no fulltext | - |
item.grantfulltext | none | - |
item.cerifentitytype | Publications | - |
crisitem.author.dept | Electronics Engineering | - |
crisitem.author.dept | Photonics and Optoelectronics | - |
crisitem.author.dept | Electrical Engineering | - |
crisitem.author.dept | Center for Condensed Matter Sciences | - |
crisitem.author.dept | MediaTek-NTU Research Center | - |
crisitem.author.dept | Center for Artificial Intelligence and Advanced Robotics | - |
crisitem.author.orcid | 0000-0002-6439-8754 | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | Others: University-Level Research Centers | - |
crisitem.author.parentorg | Others: University-Level Research Centers | - |
crisitem.author.parentorg | Others: University-Level Research Centers | - |
顯示於: | 電機工程學系 |
在 IR 系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。