https://scholars.lib.ntu.edu.tw/handle/123456789/632227
標題: | Monolithic integration of 940 nm AlGaAs distributed Bragg reflectors on bulk Ge substrates | 作者: | Zhao Y Guo J Feifel M Cheng H.-T Yang Y.-C Wang L Chrostowski L Lackner D CHAO-HSIN WU Xia G. |
公開日期: | 2022 | 卷: | 12 | 期: | 3 | 起(迄)頁: | 1131-1139 | 來源出版物: | Optical Materials Express | 摘要: | High quality 940 nm AlxGa1-xAs n-type distributed Bragg reflectors (DBRs) were successfully monolithically grown on off-cut Ge (100) substrates. The Ge-DBRs have reflectivity spectra comparable to those grown on conventional bulk GaAs substrates and have smooth morphology and reasonable periodicity. These results strongly support VCSEL growth and fabrication on more scalable bulk Ge substrates for larger scale production of AlGaAs-based VCSELs. © 2022 Optica Publishing Group. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85125652464&doi=10.1364%2fOME.452161&partnerID=40&md5=c45c99bb205829f54700a94ecb3c96e1 https://scholars.lib.ntu.edu.tw/handle/123456789/632227 |
ISSN: | 21593930 | DOI: | 10.1364/OME.452161 | SDG/關鍵字: | Aluminum alloys; Aluminum gallium arsenide; Distributed Bragg reflectors; Gallium alloys; Gallium arsenide; Germanium; III-V semiconductors; Monolithic integrated circuits; Reflection; Semiconductor alloys; Distributed-bragg-reflectors; GaAs substrates; Ge substrates; Ge(100); High quality; Large scale productions; Monolithic integration; Off-cuts; Reflectivity spectra; Substrates |
顯示於: | 電機工程學系 |
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