https://scholars.lib.ntu.edu.tw/handle/123456789/632301
標題: | Self-Aligned Assembly of a Poly(2-vinylpyridine)- b-Polystyrene- b-Poly(2-vinylpyridine) Triblock Copolymer on Graphene Nanoribbons | 作者: | Zhou J Thapar V Chen Y Wu B.-X Craig G.S.W Nealey P.F Hur S.-M TZU-HSUAN CHANG Xiong S. |
關鍵字: | graphene; one-dimensional assembly; solvent vapor annealing; triblock copolymer | 公開日期: | 2021 | 卷: | 13 | 期: | 34 | 起(迄)頁: | 41190-41199 | 來源出版物: | ACS Applied Materials and Interfaces | 摘要: | Directed self-assembly (DSA) of block copolymers is one of the most promising patterning techniques for patterning sub-10 nm features. However, at such small feature sizes, it is becoming increasingly difficult to fabricate the guiding pattern for the DSA process, and it is necessary to explore alternative guiding methods for DSA to achieve long-range ordered alignment. Here, we report the self-aligned assembly of a triblock copolymer, poly(2-vinylpyridine)-b-polystyrene-b-poly(2-vinylpyridine) (P2VP-b-PS-b-P2VP) on neutral graphene nanoribbons with the gap consisting of a P2VP-preferential silicon oxide (SiO2) substrate via solvent vapor annealing. The assembled P2VP-b-PS-b-P2VP demonstrated long-range, one-dimensional alignment on the graphene substrate in a direction perpendicular to the boundary of the graphene and substrate with a half-pitch size of 8 nm, which greatly alleviates the lithography resolution required for traditional chemoepitaxy DSA. A wide processing window is demonstrated with the gap between graphene stripes varying from 10 to 100 nm, overcoming the restriction on widths of guiding patterns to have commensurate domain spacing. When the gap was reduced to 10 nm, P2VP-b-PS-b-P2VP formed a straight-line pattern on both the graphene and the substrate. Monte Carlo simulations showed that the self-aligned assembly of the triblock copolymer on the graphene nanoribbons is guided at the boundary of parallel and perpendicular lamellae on graphene and SiO2, respectively. Simulations also indicate that the swelling of a system allows for rapid rearrangement of chains and quickly anneal any misaligned grains and defects. The effect of the interaction strength between SiO2 and P2VP on the self-assembly is systematically investigated in simulations. © 2021 The Authors. Published by American Chemical Society. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85114109984&doi=10.1021%2facsami.1c08940&partnerID=40&md5=452ab47f80bc93935c7f81492ffe7798 https://scholars.lib.ntu.edu.tw/handle/123456789/632301 |
ISSN: | 19448244 | DOI: | 10.1021/acsami.1c08940 | SDG/關鍵字: | Alignment; Block copolymers; Graphene nanoribbon; Monte Carlo methods; Nanoribbons; Polystyrenes; Silica; Silicon oxides; Substrates; Directed self-assembly; Graphene nanoribbons; Interaction strength; Lithography resolution; One-dimensional alignment; Patterning techniques; Poly(2-vinylpyridine) (P2VP); Solvent-vapor annealing; Graphene |
顯示於: | 電機工程學系 |
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