https://scholars.lib.ntu.edu.tw/handle/123456789/632314
標題: | A 28-GHz Class-F Power Amplifier with 4096-QAM OFDM Under-36.2 dBc EVM in 28-nm CMOS Technology | 作者: | Hung J.-C Cheng Y.-T Tsai J.-H TIAN-WEI HUANG |
關鍵字: | 5G; Class-F; CMOS; millimeter-wave; Power amplifier | 公開日期: | 2021 | 來源出版物: | 2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021 | 摘要: | A Ka-band 28-nm CMOS power amplifier (PA) has been proposed for 5G/B5G MMW high-speed applications. Under low supply voltage, 0.9-V, this PA achieves 22.5 dB of measured Gain, 37% Peak PAE and 12.3dBm OP1dB at 28 GHz. Besides, under 1024/4096-QAM OFDM digital modulation, this PA can maintain root-mean-square (rms) error vector magnitude (EVM) better than-35.35/-36.2 dB at 28 GHz. © 2021 IEEE. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85118178634&doi=10.1109%2fRFIT52905.2021.9565315&partnerID=40&md5=085fcde31b3963ef31ede071e2358bdb https://scholars.lib.ntu.edu.tw/handle/123456789/632314 |
DOI: | 10.1109/RFIT52905.2021.9565315 | SDG/關鍵字: | 5G mobile communication systems; CMOS integrated circuits; Millimeter waves; Orthogonal frequency division multiplexing; Wave power; Class F power amplifier; Class-F; CMOS; CMOS power amplifiers; CMOS technology; Error vector; Higher speed applications; Ka band; Low supply voltages; Vector magnitude; Power amplifiers |
顯示於: | 電機工程學系 |
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