https://scholars.lib.ntu.edu.tw/handle/123456789/632704
標題: | IONEnhancement of Ge0.98Si0.02Nanowire nFETs by High-κ Dielectrics | 作者: | Chen, Yu Rui Zhao, Zefu Tu, Chien Te Liu, Yi Chun Huang, Bo Wei Xing, Yifan Chen, Guan Hua CHEN-WUING LIU |
關鍵字: | Anti-ferroelectric (AFE) | GeSi | high-ΰ | nanowires (NWs) | 公開日期: | 1-十月-2022 | 出版社: | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | 卷: | 43 | 期: | 10 | 起(迄)頁: | 1601 | 來源出版物: | IEEE Electron Device Letters | 摘要: | The HfxZryO2 with high Zr content is demonstrated to form the anti-ferroelectric tetragonal phase (AFE t-phase). The peak dielectric constant (47) of Hf0.2Zr0.8O2 is achieved. By taking advantage of the high dielectric constant, the Hf0.2Zr0.8O2 is used in the gate stack on the high mobility Ge0.98Si0.02 channel to significantly enhance the drive current. Stacked two Ge0.98Si0.02 gate-all-around nanowires can have high ION per perimeter of 740∼\μ Aμ m at VOV= VDS= 0.5V. The thermal budget is as low as 450 °C. |
URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/632704 | ISSN: | 07413106 | DOI: | 10.1109/LED.2022.3201972 |
顯示於: | 電機工程學系 |
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