https://scholars.lib.ntu.edu.tw/handle/123456789/633680
標題: | Comprehensive Study of Inversion Capacitance in Metal-Insulator-Semiconductor Capacitor With Existing Oxide Charges | 作者: | Chen, Kung Chu Lin, Kuan Wun Huang, Sung Wei Lin, Jian Yu JENN-GWO HWU |
關鍵字: | metal-insulator-semiconductor (MIS) | oxide charges | 公開日期: | 1-一月-2022 | 卷: | 10 | 來源出版物: | IEEE Journal of the Electron Devices Society | 摘要: | The impact of oxide charges on the metal-insulator-semiconductor (MIS) device's capacitance (C) and conductance (G) was studied in this work. A model to calculate MIS device's C and G under the considerations of oxide charges, doping concentration, device dimension, and AC signal frequency (ω) was proposed. A relation of C-C D ω -0.5 was found, where C D is the depletion capacitance under the electrode. The relation is examined by the experimental and the TCAD simulation. The capacitance of a MIS device with oxide charges can be calculated according to the proposed model and is well-matched with the TCAD simulation under light to moderate doping concentration. For heavily doped substrates, the modeling deviates from the simulation results because of quantum confinement and concentration-dependent mobility. However, the trend of the capacitance value is still able to be estimated by our modeling. From the modeling, it was found that for Qox rm q=7.5× 1010 cm -2 , the MIS capacitor with substrate doping concentration N A=1× 1015 cm -3 exhibits a long lateral AC signal decay length of 52μ m at 1 kHz under the inversion region. The findings of this work are fundamental and are helpful for device engineering. |
URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/633680 | ISSN: | 2168-6734 | DOI: | 10.1109/JEDS.2022.3215771 |
顯示於: | 電機工程學系 |
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