https://scholars.lib.ntu.edu.tw/handle/123456789/633728
標題: | Process improvement of p-GaN HEMTs with a u-GaN etching buffer layer inserted | 作者: | Chang, Chih Yao Shen, Yao Luen Tang, Shun Wei Wu, Tian Li Kuo, Wei Hung Lin, Suh Fang YUH-RENN WU Huang, Chih Fang |
關鍵字: | GaN | high electron mobility transistor (HEMT) | p-GaN etching | 公開日期: | 1-十一月-2022 | 卷: | 15 | 期: | 11 | 來源出版物: | Applied Physics Express | 摘要: | In this study, a 10 nm u-GaN etching buffer layer was designed and inserted into the standard p-GaN/AlGaN/GaN high electron mobility transistor structure to improve the p-GaN etching process. The experimental result shows that the device with the u-GaN layer can avoid the over-etched issue, further improving the uniformity of the etching profile and the ON-resistance of the devices. The simulation result indicates that the drain current would slightly increase due to reduced conduction band raising when the u-GaN layer is inserted. In sum, the process uniformity can improve when the u-GaN layer is inserted and in the meantime, excellent device characteristics are maintained. |
URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/633728 | ISSN: | 18820778 | DOI: | 10.35848/1882-0786/ac9c45 |
顯示於: | 電機工程學系 |
在 IR 系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。