https://scholars.lib.ntu.edu.tw/handle/123456789/633930
標題: | High-κ perovskite membranes as insulators for two-dimensional transistors | 作者: | Huang, Jing-Kai Wan, Yi Shi, Junjie Zhang, Ji Wang, Zeheng Wang, Wenxuan Yang, Ni Liu, Yang Lin, Chun-Ho Guan, Xinwei Hu, Long Yang, Zi-Liang Huang, Bo-Chao YA-PING CHIU Yang, Jack Tung, Vincent Wang, Danyang Kalantar-Zadeh, Kourosh Wu, Tom Zu, Xiaotao Qiao, Liang Li, Lain-Jong Li, Sean |
公開日期: | 五月-2022 | 卷: | 605 | 期: | 7909 | 來源出版物: | Nature | 摘要: | The scaling of silicon metal-oxide-semiconductor field-effect transistors has followed Moore's law for decades, but the physical thinning of silicon at sub-ten-nanometre technology nodes introduces issues such as leakage currents1. Two-dimensional (2D) layered semiconductors, with an atomic thickness that allows superior gate-field penetration, are of interest as channel materials for future transistors2,3. However, the integration of high-dielectric-constant (κ) materials with 2D materials, while scaling their capacitance equivalent thickness (CET), has proved challenging. Here we explore transferrable ultrahigh-κ single-crystalline perovskite strontium-titanium-oxide membranes as a gate dielectric for 2D field-effect transistors. Our perovskite membranes exhibit a desirable sub-one-nanometre CET with a low leakage current (less than 10-2 amperes per square centimetre at 2.5 megavolts per centimetre). We find that the van der Waals gap between strontium-titanium-oxide dielectrics and 2D semiconductors mitigates the unfavourable fringing-induced barrier-lowering effect resulting from the use of ultrahigh-κ dielectrics4. Typical short-channel transistors made of scalable molybdenum-disulfide films by chemical vapour deposition and strontium-titanium-oxide dielectrics exhibit steep subthreshold swings down to about 70 millivolts per decade and on/off current ratios up to 107, which matches the low-power specifications suggested by the latest International Roadmap for Devices and Systems5. |
URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/633930 | ISSN: | 00280836 | DOI: | 10.1038/s41586-022-04588-2 |
顯示於: | 物理學系 |
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