https://scholars.lib.ntu.edu.tw/handle/123456789/633932
Title: | Crystalline Complex Oxide Membrane: Sub-1 nm CET Dielectrics for 2D Transistors | Authors: | Huang, Jing Kai Wan, Yi Shi, Junjie Zhang, Ji Wang, Zeheng Yang, Zi Liang Huang, Bo Chao YA-PING CHIU Wang, Wenxuan Yang, Ni Liu, Yang Lin, Chun Ho Guan, Xinwei Hu, Long Yang, Jack Wang, Danyang Tung, Vincent Kalantar-Zadeh, Kourosh Wu, Tom Zu, Xiaotao Qiao, Liang Li, Sean Li, Lain Jong |
Issue Date: | 1-Jan-2022 | Journal Volume: | 2022-December | Source: | Technical Digest - International Electron Devices Meeting, IEDM | Abstract: | Atomically thin 2D semiconductors have been regarded as promising candidates for the channels in ultra-scaled transistors. Although high-performance 2D field-effect transistors (FETs) have been demonstrated, the integration with conventional high-κ gate insulators is yet to be improved for energy-efficient devices. Here, 2D FETs with sub-1 nm capacitance equivalent thickness (CET) are demonstrated through the integration of transferrable single-crystal SrTiO3 thin dielectrics with a monolayer CVD MoS2, where the optimized SrTiO3 gate stack exhibits a gate leakage far below the low-standby-power limit (1.5×10-2 A/cm2). The short-channel devices manifest good reliability and competitive performance characteristics, including the steep subthreshold swing (SS) down to 75 mV dec-1 and a large ON/OFF current ratio of 106. |
URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/633932 | ISBN: | 9781665489591 | ISSN: | 01631918 | DOI: | 10.1109/IEDM45625.2022.10019466 |
Appears in Collections: | 物理學系 |
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