https://scholars.lib.ntu.edu.tw/handle/123456789/634450
標題: | GaN on Si RF performance with different AlGaN back barrier | 作者: | Hsieh, Chang Yan Chen, Hui Yu Tu, Po Tsung Chen, Jui Chin Yang, Hsin Yun Yeh, Po Chun Hsieh, De Liu, Hsueh Hsing Fu, Yi Keng Sheu, Shyh Shyuan Kuo, Hao Chung YUH-RENN WU Lo, Wei Chung Chang, Shih Chieh |
公開日期: | 1-一月-2023 | 來源出版物: | 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings | 摘要: | In this paper, the DC and RF device performance of AlGaN/GaN high-electron-mobility transistors (HEMTs) with different AlGaN back barrier thickness has been studied. The test results of the HEMTs with 50 nm back barrier exhibit Idssat=640 mA mm gm=405 mS mm, and on/off ratio = 1.5 E+04. In small-signal operation, cut-off frequency FT FMAX=59/127 GHz are achieved, which gives a high value of ( FT × Lg)=14.7 GHz ×μ m among the reported GaN-on-Si devices. |
URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/634450 | ISBN: | 9798350334166 | DOI: | 10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134089 |
顯示於: | 電機工程學系 |
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