https://scholars.lib.ntu.edu.tw/handle/123456789/634451
標題: | A Kinetic Monte Carlo Simulation Study of WS<inf>2</inf>RRAM with Different 2D Layer Thickness | 作者: | Chen, Ying Chuan Chao, Yu Ting Chen, Edward CHAO-HSIN WU YUH-RENN WU |
關鍵字: | activation energy | breakdown electric field | KMC | retention time | WS2 RRAM | 公開日期: | 1-一月-2023 | 來源出版物: | 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings | 摘要: | A 2D RRAM made by WS2 with different active layer thickness has been studied including experiments and simulations. The physical parameters in the KMC model have been obtained through data calibration. The model has prediction power for I-V characteristics, retention time, and breakdown electric field for a WS2 RRAM with different 2D layer thickness. This work reveals fundamental differences between a 2D RRAM and a conventional oxide RRAM. |
URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/634451 | ISBN: | 9798350334166 | DOI: | 10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134133 |
顯示於: | 電機工程學系 |
在 IR 系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。